All-inorganic CsPbI₃ halide perovskite quantum dots have high quantum efficiency, unique band gap and narrow band emission characteristics, and are widely considered to be competitive candidates for pure red light-emitting diodes (LEDs). However, the stability of CsPbI₃ perovskite quantum dots and the large-area film-forming process are the main obstacles to their practical application in the LED field. In this work, we successfully improved the luminescence intensity and stability of CsPbI₃ perovskite quantum dots by using Mg²⁺ / Yb³⁺ co-doping strategy. The luminescence intensity of CsPbI₃ quantum dots after ion doping regulation is increased by 1.92 times. In addition, the CsPbI₃ perovskite nanocrystals after ion doping regulation still maintain high optical stability after being placed at 120 °C for 70 minutes and 10 days in the external environment, respectively. Based on these perovskite nanocrystals, we also fabricate large-scale patterned LEDs (25.4 mm×25.4 mm). At a bias voltage of 6 V, the fabricated LEDs exhibit a luminance of 749 cd m^-2. At a current density of 6.4 mA cm^-2, the fabricated LEDs achieve an external quantum efficiency of 10.9%. This result is expected to fuel the rapid growth of large-area pure red LEDs.